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| SEMiX101GD12E4s Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE 20 V VCES 1200 V VGES tpsc Tj Inverse diode IF Tc = 25 C Tc = 80 C Tj = 150 C Tj = 175 C Tc = 25 C Tc = 80 C 1200 160 123 100 300 -20 ... 20 10 -40 ... 175 121 91 100 IFRM = 3xIFnom tp = 10 ms, sin 180, Tj = 25 C 300 550 -40 ... 175 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A C V Conditions Values Unit SEMiX(R) 13 Trench IGBT Modules SEMiX101GD12E4s Tj = 175 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognized, file no. E63532 IFRM IFSM Tj Module It(RMS) Tstg Visol Typical Applications* * AC inverter drives * UPS * Electronic Welding Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) IC = 100 A VGE = 15 V chiplevel Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C VGE = 15 V Tj = 25 C Tj = 150 C 5 Tj = 25 C Tj = 150 C f = 1 MHz f = 1 MHz f = 1 MHz 6.2 0.41 0.34 565 7.50 Tj = 150 C Tj = 150 C Tj = 150 C 187 35 10.8 467 94 13.3 0.27 1.8 2.2 0.8 0.7 10.0 15.0 5.8 0.1 2.05 2.4 0.9 0.8 11.5 16.0 6.5 0.3 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W Conditions min. typ. max. Unit Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C VGE=VCE, IC = 3.8 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 600 V IC = 100 A RG on = 1 Tj = 150 C RG off = 1 di/dton = 3100 A/s Tj = 150 C di/dtoff = 1200 A/s Tj = 150 C per IGBT GD (c) by SEMIKRON Rev. 0 - 05.05.2010 1 SEMiX101GD12E4s Characteristics Symbol Conditions Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C rF Tj = 25 C Tj = 150 C IF = 100 A Tj = 150 C di/dtoff = 3000 A/s T = 150 C j VGE = -15 V Tj = 150 C VCC = 600 V per diode 1.1 0.7 8.0 10.5 min. typ. 2.2 2.1 1.3 0.9 9.0 12.5 95 16 6.5 max. 2.52 2.5 1.5 1.1 10.2 13.7 Unit V V V V m m A C mJ Inverse diode VF = VEC IF = 100 A VGE = 0 V chip VF0 SEMiX(R) 13 Trench IGBT Modules SEMiX101GD12E4s IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.48 20 K/W nH m m K/W res., terminal-chip per module to heat sink (M5) TC = 25 C TC = 125 C 3 to terminals (M6) 2.5 0.7 1 0.04 5 5 350 Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognized, file no. E63532 Rth(c-s) Ms Mt w Nm Nm Nm g K Typical Applications* * AC inverter drives * UPS * Electronic Welding Temperatur Sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 5% 3550 2% Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C GD 2 Rev. 0 - 05.05.2010 (c) by SEMIKRON SEMiX101GD12E4s Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 0 - 05.05.2010 3 SEMiX101GD12E4s Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 0 - 05.05.2010 (c) by SEMIKRON SEMiX101GD12E4s SEMiX 13 spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. (c) by SEMIKRON Rev. 0 - 05.05.2010 5 |
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